Photodiodes Si APD Enhanced for 905nm 500um Area

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Product Information

Type	NIR Enhanced Response Avalanche Photodiode
Photodiode Material	Silicon
Peak Wavelength	905 nm
Half Intensity Angle Degrees	108 deg
Maximum Dark Current	5 nA
Package / Case	TO-52-S1
Light Current	1 uA
Maximum Operating Temperature	+ 100 C
Minimum Operating Temperature	- 40 C
Mounting Style	Through Hole
Packaging	Bulk
Power Dissipation	100 mW
Product	Avalanche Photodiode
Reverse Voltage	160 V
Rise Time	550 ps
Sensitivity	60 A/W
Factory Pack Quantity	50

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