MOSFET N-CHANNEL ENHANCEMENT MODE

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Product Information

Transistor Polarity	N-Channel
Drain-Source Breakdown Voltage	60 V
Gate-Source Breakdown Voltage	+/- 20 V
Continuous Drain Current	0.115 A
Resistance Drain-Source RDS (on)	6000 mOhms
Configuration	Single
Maximum Operating Temperature	+ 150 C
Mounting Style	SMD/SMT
Package / Case	SOT-23-3
Packaging	Reel
Minimum Operating Temperature	- 55 C
Power Dissipation	250 mW
Factory Pack Quantity	3000
Typical Turn-Off Delay Time	33 ns

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